JOURNAL ARTICLE

Photoluminescence of charged InAs self-assembled quantum dots

Klaus SchmidtG. Medeiros‐RibeiroP. M. Petroff

Year: 1998 Journal:   Physical review. B, Condensed matter Vol: 58 (7)Pages: 3597-3600   Publisher: American Physical Society

Abstract

We have used capacitance and photoluminescence spectroscopy to study the optical properties of charged InAs self-assembled quantum dots. When the dots are loaded with electrons, the ground-state transition in the photoluminescence spectra shows a redshift of about 15 meV accompanied by a decrease in intensity and a broadening. In addition, an excited-state transition appears. All the observations mentioned above are attributed to many-body effects caused by charging of the quantum dots with electrons. The observed changes of the photoluminescence signal are also discussed in terms of field effects.

Keywords:
Photoluminescence Quantum dot Excited state Electron Ground state Spectroscopy Materials science Atomic physics Condensed matter physics Optoelectronics Physics Quantum mechanics

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Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Quantum Dots Synthesis And Properties
Physical Sciences →  Materials Science →  Materials Chemistry
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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