Raman spectroscopy of four epitaxial graphene layers: Macro-island grown on 4H-SiC substrate and an associated strain distribution

Amira Ben Gouider Trabelsi; Abdelkarim Ouerghi; O. Kusmartseva; F. V. Kusmartsev; M. Oueslati

doi:10.1016/j.tsf.2013.05.093

ScienceGate Book Chapters

JOURNAL ARTICLE

Raman spectroscopy of four epitaxial graphene layers: Macro-island grown on 4H-SiC substrate and an associated strain distribution

Amira Ben Gouider Trabelsi Abdelkarim Ouerghi O. Kusmartseva F. V. Kusmartsev M. Oueslati

Year: 2013 Journal: Thin Solid Films Vol: 539 Pages: 377-383 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2013.05.093

Get Full-Text PDF Get Analytical Report

Keywords:

Raman spectroscopy Substrate (aquarium) Materials science Graphene Epitaxy Strain (injury) Layer (electronics) Spectroscopy Optoelectronics Optics Analytical Chemistry (journal) Condensed matter physics Nanotechnology Chemistry Physics

Metrics

Cited By

1.46

FWCI (Field Weighted Citation Impact)

Refs

0.81

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Boron and Carbon Nanomaterials Research

Physical Sciences → Materials Science → Materials Chemistry

Raman spectroscopy of four epitaxial graphene layers: Macro-island grown on 4H-SiC substrate and an associated strain distribution

Metrics

Citation History

Topics

Related Documents

Probing residual strain in epitaxial graphene layers on 4H-SiC(0001¯) with Raman spectroscopy

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Raman spectroscopy of epitaxial graphene on a SiC substrate

Raman analysis of epitaxial graphene grown on 4H—SiC (0001) substrate under low pressure condition