Comparison of diffusion in amorphous Si–C–N and Si–B–C–N precursor-derived ceramics

Harald Schmidt; Günter Borchardt; Serge Weber; H. Scherrer; H. Baumann; Achim Müller; Joachim Bill

doi:10.1016/s0022-3093(01)01055-9

ScienceGate Book Chapters

JOURNAL ARTICLE

Comparison of diffusion in amorphous Si–C–N and Si–B–C–N precursor-derived ceramics

Harald Schmidt Günter Borchardt Serge Weber H. Scherrer H. Baumann Achim Müller Joachim Bill

Year: 2002 Journal: Journal of Non-Crystalline Solids Vol: 298 (2-3)Pages: 232-240 Publisher: Elsevier BV

DOI: 10.1016/s0022-3093(01)01055-9

Get Full-Text PDF Get Analytical Report

Keywords:

Amorphous solid Materials science Ceramic Boron Arrhenius equation Silicon Diffusion Analytical Chemistry (journal) Vacancy defect Activation energy Ion Secondary ion mass spectrometry Crystallography Physical chemistry Chemistry Thermodynamics Metallurgy Organic chemistry

Metrics

Cited By

2.01

FWCI (Field Weighted Citation Impact)

Refs

0.84

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Advanced ceramic materials synthesis

Physical Sciences → Materials Science → Ceramics and Composites

Nuclear materials and radiation effects

Physical Sciences → Materials Science → Materials Chemistry

Glass properties and applications

Physical Sciences → Materials Science → Ceramics and Composites

Comparison of diffusion in amorphous Si–C–N and Si–B–C–N precursor-derived ceramics

Metrics

Citation History

Topics

Related Documents

Precursor-derived Si-B-C-N ceramics

Trap-limited diffusion of hydrogen in precursor derived amorphous Si–B–C–N-ceramics

High Temperature Deformation of Precursor-derived Amorphous Si–B–C–N Ceramics

Precursor‐derived Si–(B–)C–N ceramics: thermolysis, amorphous state and crystallization

Anelasticity of precursor derived Si–B–C–N ceramics