Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths

Abstract

Discussed in the paper is frequency multiplication in resonance-tunnel diodes with a variety of current-voltage characteristics. Single-level resonance-tunneling diodes like Al0.2 Ga0.8As/GaAs, In0.53Ga0.47As / AlAs, InAs / AlAs / GaSb and the two-level AlAs / GaAs are considered. As has been found, the highest frequency conversion factors at all harmonics are shown by the two-level resonance-tunneling diode, with or without bias voltage, compared with the single level resonance-tunneling diodes. The high frequency conversion factor for the harmonic components enables obtaining power levels at the harmonics comparable to those of Gunn generators and avalanche-transit time diodes at millimeter wavelengths.