InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

Abstract

Data are presented on long-wavelength (λ>1 μm) strained-layer InGaAs-GaAs quantum well buried heterostructure lasers grown by a two-step metalorganic chemical vapor deposition (MOCVD) process. Wet chemical etched mesas with an active region width of 3.5 μm are formed in a step-graded InGaAs-GaAs quantum well structure using an oxide mask. Selective MOCVD regrowth is used to form the buried heterostructure. Data are presented for devices having output powers of greater than 130 mW/facet, pulsed threshold currents of less than 7 mA, and internal quantum efficiencies of greater than 60%, for an emission wavelength of 1.074 μm. The near-field patterns indicate stable index-guided fundamental mode operation to greater than 30Ith.