Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates

Tomoaki Fujii; Atsushi Kobayashi; Kazuma Shimomoto; Jitsuo Ohta; Masaharu Oshima; Hiroshi Fujioka

doi:10.1143/jjap.49.080204

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Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates

Tomoaki Fujii Atsushi Kobayashi Kazuma Shimomoto Jitsuo Ohta Masaharu Oshima Hiroshi Fujioka

Year: 2010 Journal: Japanese Journal of Applied Physics Vol: 49 (8R)Pages: 080204-080204 Publisher: Institute of Physics

DOI: 10.1143/jjap.49.080204

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Abstract

We have investigated the epitaxial growth of InN films on yttria-stabilized zirconia (YSZ) substrates with various surface orientations. Through systematic crystallographic investigations, we have found that the epitaxial relationship of InN[1120] ∥YSZ [110] and InN[0001] ∥YSZ [111] holds in the InN/YSZ system. This enables us to grow semipolar InN films with arbitrary orientations.

Keywords:

Yttria-stabilized zirconia Epitaxy Cubic zirconia Materials science Crystallography Optoelectronics Nanotechnology Composite material Chemistry Ceramic

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Acoustic Wave Resonator Technologies

Physical Sciences → Engineering → Biomedical Engineering

Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates

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