Polytypism of silicon carbide and Schottky barriers

Abstract

The results obtained in our previous work [4] are revised taking into account the dependence of the electron affinity on the polytype of silicon carbide SiC. The dependence of the energy level of vacancies in a polytype of silicon carbide on the band gap is determined from the data on the Schottky barrier height and is explained in the framework of a simple two-band model.