Field emission study of SiC nanowires/nanorods directly grown on SiC ceramic substrate

Abstract

Single crystalline silicon carbide (SiC) nanowires were grown directly on the surface of bulk SiC ceramic substrate in a catalyst-assisted thermal heating process. The morphology of the nanowire film and the diameter of nanowires were found to be sensitive to the thickness of catalyst film and both of them had a strong effect on field emission performance. Very low turn-on and threshold fields for electron emission were observed with SiC nanowires of small diameter. A model is proposed to qualitatively explain the field emission findings, which assumes the occurrence of an insulator-to-metal-like transition in a field emitting nanowire.