JOURNAL ARTICLE

Atmospheric Pressure Chemical Vapor Deposition of 3C-SiC

Keywords:
Materials science Photoluminescence Crystallite Chemical vapor deposition Spectral line Analytical Chemistry (journal) Substrate (aquarium) Atmospheric pressure Optoelectronics Metallurgy

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Topics

Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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JOURNAL ARTICLE

Epitaxial growth of 3C-SiC on Si by low-pressure chemical vapor deposition

Yuji FujiwaraE. SakumaS. MisawaKazuhiko EndoS. Yoshida

Journal:   Applied Physics Letters Year: 1986 Vol: 49 (7)Pages: 388-390
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