Atmospheric Pressure Chemical Vapor Deposition of 3C-SiC

Michael W. Russell; Jaime A. Freitas; Alan D. Berry; J. E. Butler

doi:10.1557/proc-410-351

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Atmospheric Pressure Chemical Vapor Deposition of 3C-SiC

Michael W. Russell Jaime A. Freitas Alan D. Berry J. E. Butler

Year: 1995 Journal: MRS Proceedings Vol: 410 Publisher: Cambridge University Press

DOI: 10.1557/proc-410-351

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Keywords:

Materials science Photoluminescence Crystallite Chemical vapor deposition Spectral line Analytical Chemistry (journal) Substrate (aquarium) Atmospheric pressure Optoelectronics Metallurgy

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Atmospheric Pressure Chemical Vapor Deposition of 3C-SiC

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