Fabrication of SiO₂/Si/SiO₂ Double Barrier Diodes using Two-Dimensional Si Structures

Abstract

In this article, we demonstrate a technique for fabricating SiO 2 /two-dimensional (2D)-Si/SiO 2 double barrier diodes and discuss their characteristics. Vertical 2D-Si with {111} side planes is formed by orientation-dependent etching of {110} Si using aqueous alkaline solution. The linewidth of the 2D-Si is reduced to nanometer order with NH 4 F/H 2 O 2 solution. This solution also removes the residue generated on Si planes etched by aqueous alkaline solution. Using a skillful arrangement of dummy patterns and an etchback technique, poly-Si electrodes are successfully formed without any lithographic alignments. A SiO 2 /2D-Si/SiO 2 diode fabricated by this process shows resonant characteristics that are in agreement with the calculated values.