High quantum efficiency AlGaN solar-blind p-i-n photodiodes

Abstract

We report AlGaN-based back-illuminated solar-blind ultraviolet p-i-n photodetectors with a peak responsivity of 136 mA/W at 282 nm without bias. This corresponds to a high external quantum efficiency of 60%, which improves to a value as high as 72% under 5 V reverse bias. We attribute the high performance of these devices to the use of a very-high quality AlN and Al0.87Ga0.13N/AlN superlattice material and a highly conductive Si–In co-doped Al0.5Ga0.5N layer.