Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

B. Saint-Cricq; S. Bonnefont; F. Lozes-Dupuy; H. Martinot; R. Azoulay; E. V. K. Rao; L. Dugrand; A. Mircéa

doi:10.1016/0921-5107(91)90200-f

ScienceGate Book Chapters

JOURNAL ARTICLE

Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

B. Saint-Cricq S. Bonnefont F. Lozes-Dupuy H. Martinot R. Azoulay E. V. K. Rao L. Dugrand A. Mircéa

Year: 1991 Journal: Materials Science and Engineering B Vol: 9 (1-3)Pages: 351-354 Publisher: Elsevier BV

DOI: 10.1016/0921-5107(91)90200-f

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Epitaxy Optoelectronics Quantum well Fabrication Laser Etching (microfabrication) Continuous wave Reactive-ion etching Metalorganic vapour phase epitaxy Longitudinal mode Facet (psychology) Gallium arsenide Ridge Layer (electronics) Optics Wavelength Nanotechnology Physics

Metrics

Cited By

0.43

FWCI (Field Weighted Citation Impact)

Refs

0.62

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

Metrics

Topics

Related Documents

Low-threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure

0.98‐μm ingaas/gaas strained quantum well ridge waveguide lasers

Continuous-Wave Operation of 1.23μm Highly Strained InGaAs Quantum-Well Ridge Waveguide Lasers on GaAs Substrates

Low-Threshold Strained-Layer InGaAs Ridge Waveguide Lasers

High-power operation in 0.98- mu m strained-layer InGaAs-GaAs single-quantum-well ridge waveguide lasers