Properties of Ion Beam Synthesized Iron Disilicide Dots

Mattéo Galli; F. Marabelli; A. Pagetti; Maria Grazia Grimaldi; S. Coffay; C. Spinella; Leo Miglio

doi:10.1557/proc-571-287

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Properties of Ion Beam Synthesized Iron Disilicide Dots

Mattéo Galli F. Marabelli A. Pagetti Maria Grazia Grimaldi S. Coffay C. Spinella Leo Miglio

Year: 1999 Journal: MRS Proceedings Vol: 571 Publisher: Cambridge University Press

DOI: 10.1557/proc-571-287

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Keywords:

Materials science Silicide Luminescence Quantum dot Wafer Ion beam Characterization (materials science) Lattice (music) Nanotechnology Optoelectronics Ion Silicon

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Properties of Ion Beam Synthesized Iron Disilicide Dots

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