An improved AuGeNi ohmic contact to n-type GaAs

Robert A. Bruce; G. R. Piercy

doi:10.1016/0038-1101(87)90112-2

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An improved AuGeNi ohmic contact to n-type GaAs

Robert A. Bruce G. R. Piercy

Year: 1987 Journal: Solid-State Electronics Vol: 30 (7)Pages: 729-737 Publisher: Elsevier BV

DOI: 10.1016/0038-1101(87)90112-2

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Keywords:

Ohmic contact Materials science Contact resistance Microstructure Germanium Diffusion barrier Metallurgy Composite material Silicon Layer (electronics)

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

An improved AuGeNi ohmic contact to n-type GaAs

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