JOURNAL ARTICLE

Polytypes and Excitons in GaSe1-xSx Mixed Crystals

Hiroshi SerizawaYoshiro SasakiYūichirō Nishina

Year: 1980 Journal:   Journal of the Physical Society of Japan Vol: 48 (2)Pages: 490-495   Publisher: Physical Society of Japan

Abstract

We have investigated the quantitative relationship between the polytypes and the direct and indirect exciton gap energies in GaSe 1- x S x mixed crystals. The X-ray diffraction analysis shows that GaSe 1- x S x is the ε -type for 0(GaSe)\({\leq}x{\lesssim}0.01\), the γ-type for \(0.05{\lesssim}x{\lesssim}0.4\), the β-type for \(0.5{\lesssim}x{\leq}1\)(GaS), and a mixture of the ε - and γ-types for \(0.01{\lesssim}x{\lesssim}0.03\). The direct and indirect exciton gap energies are determined from optical absorption and luminescence excitation spectra. The plots of the direct and indirect exciton gap energies ν s the compositional parameter x show kinks in the neighborhood of x =0.4. Furthermore, a jump in the indirect exciton gap energy is found at around x =0.02. These anomalies at x =0.02 and 0.4 are attributed to the ε -γ and γ-β polytype transformations, respectively.

Keywords:
Exciton Physics Luminescence Excitation Type (biology) Spectral line Band gap Condensed matter physics Energy (signal processing) Absorption (acoustics) Materials science Atomic physics Optics Quantum mechanics

Metrics

41
Cited By
5.19
FWCI (Field Weighted Citation Impact)
19
Refs
0.96
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Solid-state spectroscopy and crystallography
Physical Sciences →  Materials Science →  Materials Chemistry
Phase-change materials and chalcogenides
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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