Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy

Byoung-Rho Shim; Satoshi Torii; Takeshi Ota; Keisuke Kobayashi; Kenzo Maehashi; Shigehiko Hasegawa; Kōichi Inoue; Hisao Nakashima

doi:10.1016/s0038-1101(98)00080-x

JOURNAL ARTICLE

Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy

Byoung-Rho Shim Satoshi Torii Takeshi Ota Keisuke Kobayashi Kenzo Maehashi Shigehiko Hasegawa Kōichi Inoue Hisao Nakashima

Year: 1998 Journal: Solid-State Electronics Vol: 42 (7-8)Pages: 1609-1612 Publisher: Elsevier BV

DOI: 10.1016/s0038-1101(98)00080-x

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Keywords:

Vicinal Molecular beam epitaxy Photoluminescence Transmission electron microscopy Materials science Optoelectronics Modulation (music) Quantum well Epitaxy Chemistry Nanotechnology Optics Physics

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Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy

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