High efficiency NiO/ZnO heterojunction UV photodiode by sol–gel processing
Namseok ParkKe SunZhelin SunYi JingDeli Wang
Abstract
We studied the thin film heterojunction photodiode made of nickel oxide (NiO) and zinc oxide (ZnO) deposited by low cost energy-efficient sol–gel spin coating. The highly visible-transparent heterojunction photodiode with a smooth interface gives rise to a good photoresponse and quantum efficiency under ultra-violet (UV) light illumination. With an applied reverse bias of 5 V, a very impressive peak photo responsivity of 21.8 A W−1 and an external quantum efficiency (EQE) of 88% at an incident light wavelength of 310 nm were accomplished.
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