Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
Rajat SharmaYong‐Seok ChoiChiou-Fu WangAurélien DavidClaude WeisbuchShuji NakamuraEvelyn L. Hu
Abstract
We report on the realization of highly efficient InGaN microcavity light-emitting diodes incorporating a high index contrast air-gap distributed Bragg reflector (DBR). Detailed analysis deduces an effective cavity length of ∼500nm and cavity mode orders of 5 and 6 for measured Fabry-Pérot fringes. A value reflectivity of ∼70% was determined for the 4.5 period air∕Al0.08Ga0.92N DBR through the analysis of cavity finesse based on the angle-resolved photoluminescence (PL) data. A fivefold improvement in light extraction efficiency was verified by electrical probing as well as angle-resolved PL measurements.
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