Electronic properties and Schottky barrier of the porous silicon—Au interface

R. Laiho; Alexander A. Pavlov

doi:10.1016/0040-6090(94)05671-y

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Electronic properties and Schottky barrier of the porous silicon—Au interface

R. Laiho Alexander A. Pavlov

Year: 1995 Journal: Thin Solid Films Vol: 255 (1-2)Pages: 276-278 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(94)05671-y

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Keywords:

Porous silicon Materials science Silicon Wafer Schottky barrier Capacitance Optoelectronics Schottky diode Capacitor Voltage Electrical engineering Chemistry Electrode

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic properties and Schottky barrier of the porous silicon—Au interface

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