Ambipolar rubrene thin film transistors

Abstract

We report ambipolar field-effect transistors fabricated from rubrene thin films on SiO2∕Si substrates. The mobilities of both holes and electrons were extremely low, ranging from 2.2×10−6to8.0×10−6cm2∕Vs, due to disorder in the films. Rubrene forms three-dimensional circular islands even at extremely low coverages and x-ray diffraction observations suggest that the film is amorphous. The formation of the conducting channel of the transistor follows the geometric percolation of rubrene islands.