Abstract

Cryogenic cooling of receivers to reduce their noise temperature is especially important in radio astronomy, as the antenna noise temperature is determined by the cosmic microwave background radiation (2.725 K) modified by the presence of atmosphere. For frequencies up to 120 GHz direct amplification at cryogenic temperatures is typically employed using InP heterostructure field-effect transistors (HFETs) or, more recently, SiGe heterostructure bipolar transistors (HBTs). This article reviews developments in this field and presents the current state-of-the-art. Examples of noise performance of amplifiers using InP HFETs and SiGe HBTs are compared with the model predications. Some gaps in our current understanding of experimental results are emphasized, and some comments on possible future developments are offered.

Keywords:
Amplifier Bipolar junction transistor Optoelectronics Microwave Noise (video) Noise temperature Heterojunction bipolar transistor Radio astronomy Antenna (radio) Cosmic microwave background Transistor Cryogenics Materials science Physics Electrical engineering Engineering physics Engineering Computer science Optics Astronomy Voltage

Metrics

61
Cited By
2.27
FWCI (Field Weighted Citation Impact)
16
Refs
0.90
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Radio Frequency Integrated Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Superconducting and THz Device Technology
Physical Sciences →  Physics and Astronomy →  Astronomy and Astrophysics
Microwave Engineering and Waveguides
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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