Solution‐Processed Fabrication of Single‐Walled Carbon Nanotube Field Effect Transistors
Masashi ShiraishiTaishi TakenobuYoshihiro IwasaTaisuke IwaiHiromichi KatauraMasafumi Ata
Abstract
Abstract We report the fabrication of thin film SWNT‐FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution‐processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large‐scale liquid phase production of commercially available flexible organic devices.
Metrics
Topics
Related Documents
Single-walled carbon nanotube aggregates for solution-processed field effect transistors
Masashi ShiraishiTaishi TakenobuToshinori IwaiYoshihiro IwasaHiromichi KatauraMasafumi Ata
Heterostructured semiconductor single-walled carbon nanotube films for solution-processed high-performance field-effect transistors
Noh‐Hwal ParkSeung‐Hoon LeeSeung-Hyeon JeongDongyoon KhimYun Ho KimSungmi YooYong‐Young NohJang‐Joo Kim
Logic circuits using solution-processed single-walled carbon nanotube transistors
Ryo NouchiHaruo TomitaAkio OguraHiromichi KatauraMasashi Shiraishi
Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics
Sung Hun JinJongmin ShinIn-Tak ChoSang Youn HanDong Joon LeeChi Hwan LeeJong‐Ho LeeJohn A. Rogers
FABRICATION OF CARBON NANOTUBE FIELD EFFECT TRANSISTORS WITH OCMC DISPERSED SINGLE-WALLED CARBON NANOTUBES
Kumar RajQing ZhangLiangyu YanMary B. Chan Park