Ultraviolet laser ablation of Si3N4 thin films

Yasuo Takigawa; John C. Hemminger

doi:10.1016/0169-4332(94)90403-0

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Ultraviolet laser ablation of Si3N4 thin films

Yasuo Takigawa John C. Hemminger

Year: 1994 Journal: Applied Surface Science Vol: 79-80 Pages: 146-151 Publisher: Elsevier BV

DOI: 10.1016/0169-4332(94)90403-0

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Keywords:

Fourier transform ion cyclotron resonance Ion Fluence Mass spectrum Laser ablation Excimer laser Amorphous solid Laser Analytical Chemistry (journal) Mass spectrometry Ion cyclotron resonance Ultraviolet Thin film Materials science Atomic physics Chemistry Optics Optoelectronics Physics Cyclotron Nanotechnology Crystallography

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Topics

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Advanced Materials Characterization Techniques

Physical Sciences → Engineering → Biomedical Engineering

Ultraviolet laser ablation of Si3N4 thin films

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