Aspects of Ge/Si self-assembled quantum dots

P. Boucaud; V. Le Thanh; Vy Yam; S. Sauvage; N. Meneceur; Moustafa El-Kurdi; D. Débarre; D. Bouchier

doi:10.1016/s0921-5107(01)00787-5

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Aspects of Ge/Si self-assembled quantum dots

P. Boucaud V. Le Thanh Vy Yam S. Sauvage N. Meneceur Moustafa El-Kurdi D. Débarre D. Bouchier

Year: 2002 Journal: Materials Science and Engineering B Vol: 89 (1-3)Pages: 36-44 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(01)00787-5

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Keywords:

Quantum dot Photoluminescence Flattening Condensed matter physics Materials science Excited state Excitation Chemical vapor deposition Molecular physics Nanotechnology Physics Optoelectronics Atomic physics Quantum mechanics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Aspects of Ge/Si self-assembled quantum dots

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