JOURNAL ARTICLE

Optical gain and lasing in self-assembled InP/GaInP quantum dots

A. MoritzR. WirthA. HangleiterAnne KurtenbachK. Eberl

Year: 1996 Journal:   Applied Physics Letters Vol: 69 (2)Pages: 212-214   Publisher: American Institute of Physics

Abstract

Optical gain measurements have been performed on self-assembled InP quantum dots embedded in GaInP. The dots are formed during the growth of InP on GaInP by molecular beam epitaxy due to the strong lattice mismatch and are overgrown with GaInP afterwards. The optical gain spectra show two peaks which could be clearly identified by their polarization properties as being due to the quantum dots and the wetting layer, respectively. As expected from the results of the gain measurements, optical pumping of cleaved samples at room temperature leads to lasing of either the quantum dots or the wetting layer, depending on the experimental conditions.

Keywords:
Wetting layer Lasing threshold Quantum dot Materials science Optoelectronics Molecular beam epitaxy Quantum dot laser Photoluminescence Polarization (electrochemistry) Epitaxy Gallium arsenide Layer (electronics) Semiconductor laser theory Nanotechnology Chemistry Semiconductor

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65
Cited By
7.02
FWCI (Field Weighted Citation Impact)
1
Refs
0.98
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Near-Field Optical Microscopy
Physical Sciences →  Engineering →  Biomedical Engineering

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