JOURNAL ARTICLE

Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

Tomonari ShiodaMasakazu SugiyamaYukihiro ShimogakiYoshiaki Nakano

Year: 2009 Journal:   Journal of Crystal Growth Vol: 311 (10)Pages: 2809-2812   Publisher: Elsevier BV
Keywords:
Indium Metalorganic vapour phase epitaxy Epitaxy Materials science Chemical vapor deposition Indium nitride Optoelectronics Phase (matter) Diffusion Chemistry Gallium nitride Nanotechnology

Metrics

21
Cited By
1.39
FWCI (Field Weighted Citation Impact)
16
Refs
0.83
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry

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