Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

Tomonari Shioda; Masakazu Sugiyama; Yukihiro Shimogaki; Yoshiaki Nakano

doi:10.1016/j.jcrysgro.2009.01.013

ScienceGate Book Chapters

JOURNAL ARTICLE

Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

Tomonari Shioda Masakazu Sugiyama Yukihiro Shimogaki Yoshiaki Nakano

Year: 2009 Journal: Journal of Crystal Growth Vol: 311 (10)Pages: 2809-2812 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2009.01.013

Get Full-Text PDF Get Analytical Report

Keywords:

Indium Metalorganic vapour phase epitaxy Epitaxy Materials science Chemical vapor deposition Indium nitride Optoelectronics Phase (matter) Diffusion Chemistry Gallium nitride Nanotechnology

Metrics

Cited By

1.39

FWCI (Field Weighted Citation Impact)

Refs

0.83

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

Metrics

Citation History

Topics

Related Documents

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion

Selectivity enhancement by hydrogen addition in selective area metal‐organic vapor phase epitaxy of GaN and InGaN

High mobility InN films grown by metal‐organic vapor phase epitaxy

Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films