Impedance and admittance characteristics of Bi<sub>2</sub>S<sub>3</sub> nanowire arrays

Juris Katkevics; Gunta Kunakova; Artūrs Vīksna; Justin D. Holmes; Donāts Erts

doi:10.1088/1757-899x/49/1/012007

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Impedance and admittance characteristics of Bi₂S₃ nanowire arrays

Juris Katkevics Gunta Kunakova Artūrs Vīksna Justin D. Holmes Donāts Erts

Year: 2013 Journal: IOP Conference Series Materials Science and Engineering Vol: 49 Pages: 012007-012007 Publisher: IOP Publishing

DOI: 10.1088/1757-899x/49/1/012007

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Abstract

Current studies of the electrical impedance and admittance characteristics of the anodised aluminum oxide (AAO) nanoporous arrays and bismuth sulphide (Bi2S3) nanowire within AAO membranes are presented. The influence of potential and frequency scan rate effect produced on the real, imaginary and complex electrochemical impedance and double layer capacitance of the AAO nanopore and the Bi2S3 nanowire arrays were studied.

Keywords:

Admittance Nanowire Electrical impedance Materials science Nanoporous Capacitance Nanopore Anodizing Bismuth Optoelectronics Nanotechnology Aluminium Composite material Electrode Electrical engineering Chemistry Metallurgy

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Anodic Oxide Films and Nanostructures

Physical Sciences → Materials Science → Materials Chemistry

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Impedance and admittance characteristics of Bi₂S₃ nanowire arrays

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