Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition

Prabhat Kumar; B. Schröeder

doi:10.1016/j.tsf.2007.06.035

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Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition

Prabhat Kumar B. Schröeder

Year: 2007 Journal: Thin Solid Films Vol: 516 (5)Pages: 580-583 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2007.06.035

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Keywords:

Doping Chemical vapor deposition Microcrystalline Materials science Silicon Microcrystalline silicon Chemical engineering Deposition (geology) Nanotechnology Optoelectronics Chemistry Crystalline silicon Crystallography Geology

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrical properties/Doping efficiency of doped microcrystalline silicon layers prepared by hot-wire chemical vapor deposition

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