Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

Nuofu Chen; Hongjia He; Yutian Wang; Kun Pan; Lanying Lin

doi:10.1016/0022-0248(96)00462-9

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Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

Nuofu Chen Hongjia He Yutian Wang Kun Pan Lanying Lin

Year: 1996 Journal: Journal of Crystal Growth Vol: 167 (3-4)Pages: 766-768 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(96)00462-9

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Keywords:

Dislocation Materials science Scanning electron microscope Etching (microfabrication) Gallium arsenide Gallium Arsenic Isotropic etching Precipitation Ultrasonic sensor Crystallography Metallurgy Composite material Optoelectronics Chemistry Physics

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

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