The fabrication technique and electrical properties of a free-standing GaN nanowire

Hongya Yu; B.H. Kang; Park Cw; U.H. Pi; Cheol Jin Lee; Sung‐Yool Choi

doi:10.1007/s00339-005-3276-3

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The fabrication technique and electrical properties of a free-standing GaN nanowire

Hongya Yu B.H. Kang Park Cw U.H. Pi Cheol Jin Lee Sung‐Yool Choi

Year: 2005 Journal: Applied Physics A Vol: 81 (2)Pages: 245-247 Publisher: Springer Science+Business Media

DOI: 10.1007/s00339-005-3276-3

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Keywords:

Nanowire Materials science Fabrication Optoelectronics Reactive-ion etching Substrate (aquarium) Electrode Etching (microfabrication) Nanotechnology Schottky barrier Schottky diode Liquid nitrogen Chemistry Layer (electronics)

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

The fabrication technique and electrical properties of a free-standing GaN nanowire

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