Material Properties And Device Application Of GaAs And GaAsP Grown On Si Using Superlattice Intermediate Layers By MOCVD

Abstract

The initial growth model of III-V compounds on Si is proposed and the necessary conditions to obtain an anti-phase domain (APD) free crystal are discussed. APD free crystals can be obtained on the (100) Si surface having mono-atomic as well as hiatomic layer steps if the surface has a misalignment towards <011> ±θ (θ≠45°) direction. The stress produced by the difference in thermal expansion coefficients of Si and GaAs is also calculated and discussed. The stress in the GaAs layer can be zero by adding another layer having the thermal expansion coefficient higher than GaAs either on the Si substrate back surface, or on the GaAs grown surface or in between them.