{310} faceting of the Ge(001) 2 × 1 surface induced by indium

Zheng Gai; Hang Ji; Yi He; Chuan Hu; Rui Zhao; Wenfeng Yang

doi:10.1016/0039-6028(95)00661-3

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{310} faceting of the Ge(001) 2 × 1 surface induced by indium

Zheng Gai Hang Ji Yi He Chuan Hu Rui Zhao Wenfeng Yang

Year: 1995 Journal: Surface Science Vol: 338 (1-3)Pages: L851-L856 Publisher: Elsevier BV

DOI: 10.1016/0039-6028(95)00661-3

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Keywords:

Faceting Dangling bond Scanning tunneling microscope Auger electron spectroscopy Low-energy electron diffraction Indium Crystallography Surface reconstruction Chemistry Atom (system on chip) Electron diffraction Germanium Surface (topology) Materials science Diffraction Nanotechnology Hydrogen Silicon Optics Geometry Physics

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Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Chemical Physics Studies

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

{310} faceting of the Ge(001) 2 × 1 surface induced by indium

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