Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

Robert Baier; Jascha Lehmann; Sebastian Lehmann; T. Rissom; Christian A. Kaufmann; A. Schwarzmann; Y. Rosenwaks; Martha Ch. Lux‐Steiner; Sascha Sadewasser

doi:10.1016/j.solmat.2012.04.002

JOURNAL ARTICLE

Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

Robert Baier Jascha Lehmann Sebastian Lehmann T. Rissom Christian A. Kaufmann A. Schwarzmann Y. Rosenwaks Martha Ch. Lux‐Steiner Sascha Sadewasser

Year: 2012 Journal: Solar Energy Materials and Solar Cells Vol: 103 Pages: 86-92 Publisher: Elsevier BV

DOI: 10.1016/j.solmat.2012.04.002

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Keywords:

Grain boundary Crystallite Thin film Materials science Electronic structure Analytical Chemistry (journal) Electron Chemistry Nanotechnology Microstructure Metallurgy Physics Computational chemistry

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

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