Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

Abstract

Time-resolved photoluminescence of high quality cubic GaN was measured to clarify the origin of the emissions observed in cubic GaN. The 3.27 eV emission decay was fast and the intensity decreased with a lifetime of 260 ps at early decay and with a lifetime of 900 ps afterwards. The decay of the 3.18 eV emission was much slower than that of the 3.27 eV emission and the lifetime was 3.8 ns. In time-resolved spectra, the 3.18 eV emission had a broadening on the high-energy side at early times and the peak moved to lower energies with increasing time. These results can be explained in terms of the model for a donor–acceptor pair transition.