Tae Won ChoiSeong Cho YuHyo-Tae KimPyung Woo Jang
Epitaxial growth on the hydrogen terminated Si substrates is very interesting from the view point of application as well as basic research. To decrease mismatch between metals and Si substrates, metallic films have been grown as a seed layer[1-3].
Th. KoopWerner SchindlerA. KazimirovG. ScherbJ. ZegenhagenTh. SchultzR. FeidenhansJ. Kirschner
Susumu HoritaShintaro SasakiO KitagawaSadayoshi Horii
R. NaikC. KotaJ. S. PaysonG. L. Dunifer
E. T. KrastevL. D. VoiceR. G. Tobin