Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD

Hui Wang; Yang Zhao; Chao Wu; Xin Dong; Baolin Zhang; Guoguang Wu; Yan Ma; Guotong Du

doi:10.1016/j.jlumin.2014.09.007

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Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD

Hui Wang Yang Zhao Chao Wu Xin Dong Baolin Zhang Guoguang Wu Yan Ma Guotong Du

Year: 2014 Journal: Journal of Luminescence Vol: 158 Pages: 6-10 Publisher: Elsevier BV

DOI: 10.1016/j.jlumin.2014.09.007

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Keywords:

Non-blocking I/O Electroluminescence Materials science Metalorganic vapour phase epitaxy Optoelectronics Ultraviolet Heterojunction Light-emitting diode Diode Chemical vapor deposition Layer (electronics) Chemistry Nanotechnology Epitaxy

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD

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