JOURNAL ARTICLE
X-ray Photoemission Spectroscopy Studies of Indium-tin-oxide Films Treated by Oxygen Plasma Immersion Ion Implantation
Long HeXiaoxuan FanQiongrong OuRongqing Liang
Year: 2012 Pages: LM4A.5-LM4A.5
Abstract
Oxygen plasma immersion ion implantation (PIII) was introduced to modify indium-tin-oxide (ITO) films. X-ray photoemission spectroscopy (XPS) was employed to characterize the elements ratio and core level spectra of O1s at the surface of ITO.
Keywords:
X-ray photoelectron spectroscopy Plasma-immersion ion implantation Indium tin oxide Materials science Indium Tin Photoemission spectroscopy Oxygen Analytical Chemistry (journal) Ion implantation Oxide Ion Plasma Thin film Optoelectronics Chemistry Nanotechnology Metallurgy Chemical engineering
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Topics
Metal and Thin Film Mechanics
Physical Sciences → Engineering → Mechanics of Materials
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Ion-surface interactions and analysis
Physical Sciences → Engineering → Computational Mechanics
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