Photoreflectance study of electric fields in ZnSe from ZnSe/GaAs/GaAs heterostructures

Abstract

ZnSe/GaAs/GaAs heterostructures grown by Molecular Beam Epitaxy have been studied by Photoreflectance. From Franz-Keldysh oscillations we found the electric fields at ZnSe. It was observed that the electric field value decreases with the temperature. The calculated values (<58 kV/cm) are in agreement with the typical values in semiconductors and are higher than those at the interfacial GaAs. The electric field strength is conelated with the presence of superficial states due to defects such as dislocations.