Memory effect of sol–gel derived V-doped SrZrO3 thin films

Chih‐Yi Liu; Chun-Chieh Chuang; Jian-Shian Chen; Arthur Wang; Wen-Yueh Jang; Jien-Chen Young; Kuang-Yi Chiu; Tseung‐Yuen Tseng

doi:10.1016/j.tsf.2005.08.153

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Memory effect of sol–gel derived V-doped SrZrO3 thin films

Chih‐Yi Liu Chun-Chieh Chuang Jian-Shian Chen Arthur Wang Wen-Yueh Jang Jien-Chen Young Kuang-Yi Chiu Tseung‐Yuen Tseng

Year: 2005 Journal: Thin Solid Films Vol: 494 (1-2)Pages: 287-290 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2005.08.153

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Keywords:

Materials science Bistability Thin film Scanning electron microscope Doping Non-volatile memory Sol-gel Substrate (aquarium) Optoelectronics Diffraction Voltage Nanotechnology Analytical Chemistry (journal) Optics Composite material Chemistry Electrical engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Memory effect of sol–gel derived V-doped SrZrO3 thin films

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