JOURNAL ARTICLE
Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates
T.S. ChengC. T. FoxonN.J. JeffsD J DewsnipL.B FlanneryJohn OrtonI. HarrisonС. В. НовиковB. Ya. BerYu. Kudriavtsev
Year: 1998 Journal: Materials science forum Vol: 264-268 Pages: 1217-1220 Publisher: Trans Tech Publications
Keywords:
Materials science Molecular beam epitaxy Doping Optoelectronics Magnesium Epitaxy Nanotechnology Metallurgy Layer (electronics)
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0.20
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0
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0.47
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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