Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy

Hachem Ben Naceur; Taha Mzoughi; I. Moussa; A. Rebey; B. El Jani

doi:10.1016/j.nimb.2009.09.018

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Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy

Hachem Ben Naceur Taha Mzoughi I. Moussa A. Rebey B. El Jani

Year: 2009 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 268 (3-4)Pages: 236-240 Publisher: Elsevier BV

DOI: 10.1016/j.nimb.2009.09.018

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Keywords:

Misorientation Epitaxy Materials science Phase (matter) Atmospheric pressure Substrate (aquarium) Metal Diffraction Atomic force microscopy Analytical Chemistry (journal) Optoelectronics Nanotechnology Composite material Optics Chemistry Metallurgy Microstructure Grain boundary Geology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy

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