Room-Temperature Sputter Deposition of Polycrystalline Indium-Tin Oxide

Abstract

We report the sputter deposition of indium‐tin oxide (ITO) at room temperature in pure at different sputtering powers. The film transmittance is more than 80%; the maximum being at wavelength. The resistivity is measured to be below . X‐ray diffraction measurements show a strong presence of the peak, which confirms that the films are polycrystalline in structure. The mechanism associated with the crystallinity of ITO is analyzed in terms of the distribution of sputtered species in the material and its variation with sputtering power. Based on this room‐temperature process, we fabricated a Schottky photodetector, which features a very low leakage current and high stability. ©1999 The Electrochemical Society