Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

Abstract

Fluorinated amorphous carbon films were proposed as low dielectric constant interlayer dielectrics for ultralarge scale integration circuits. The films were deposited by plasma enhanced chemical vapor deposition with CH4 and CF4 in a parallel plate rf (13.56 MHz) reactor. The dielectric constant of the amorphous carbon films deposited with CH4 was increased with increases in rf power. The addition of CF4 to CH4 raised the deposition rate and reduced the dielectric constant. At an rf power of 200 W, and at a flow rate of 47 sccm for CF4 and 3 sccm for CH4, the dielectric constant of the fluorinated amorphous carbon films was 2.1.