JOURNAL ARTICLE
Electron correlation effects at vacancies in Si(111) unreconstructed surfaces
J. A. VergésC. TejedorF. FlóresE. Louis
Year: 1984 Journal: Physical review. B, Condensed matter Vol: 30 (2)Pages: 1038-1041 Publisher: American Physical Society
Abstract
Electron correlation effects at vacancies in Si(111) unreconstructed surfaces have been analyzed within a tight-binding two-dimensional model. The electron density of states has been calculated and found to differ significantly from that characteristic of a one-electron model. Its effect on the Jahn-Teller distortion is also discussed; we find that electron correlation effects favor the vacancy distortion.
Keywords:
Distortion (music) Electron Vacancy defect Electronic correlation Condensed matter physics Materials science Atomic physics Physics Nuclear physics
Metrics
2
Cited By
0.35
FWCI (Field Weighted Citation Impact)
8
Refs
0.52
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Electron and X-Ray Spectroscopy Techniques
Physical Sciences → Materials Science → Surfaces, Coatings and Films
Surface and Thin Film Phenomena
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Ion-surface interactions and analysis
Physical Sciences → Engineering → Computational Mechanics
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