Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Jun Yao; Jian Lin; Yanhua Dai; Gedeng Ruan; Zheng Yan; Lei Li; Lin Zhong; Douglas Natelson; James M. Tour

doi:10.1038/ncomms2110

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Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Jun Yao Jian Lin Yanhua Dai Gedeng Ruan Zheng Yan Lei Li Lin Zhong Douglas Natelson James M. Tour

Year: 2012 Journal: Nature Communications Vol: 3 (1)Pages: 1101-1101 Publisher: Nature Portfolio

DOI: 10.1038/ncomms2110

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Keywords:

Materials science Graphene Non-volatile memory Optoelectronics Electronics Resistive random-access memory Resistive touchscreen Oxide Indium tin oxide Nanotechnology Electrical conductor Silicon Electrochromic devices Electrode Computer science Electrochromism Electrical engineering Thin film Composite material

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

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