JOURNAL ARTICLE
Group III-nitride materials for ultraviolet detection applications
Peter ChowJody J. KlaassenJ. M. Van HoveA. M. WowchakC. J. PolleyDavid King
Year: 2000 Journal: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 3948 Pages: 295-295 Publisher: SPIE
Abstract
High performance UV detectors have been fabricated using group III-nitride materials grown by molecular beam epitaxy. GaN PIN detectors exhibit near quantum efficiency limited responsivity, sharp spectral cutoff, and high shunt resistance of several hundred mega-ohms for 0.5 mm2 active area devices. Comparison of PIN and Schottky devices is presented. The capabilities of group III-nitride based UV detectors is discussed in relation to suitability in UV sensing applications such as high temperature flame sensing, UV-B solar radiation monitoring, and high intensity UV dosimetry.
Keywords:
Optoelectronics Responsivity Materials science Detector Ultraviolet Nitride Molecular beam epitaxy Schottky diode Particle detector Dosimetry Photodetector Optics Epitaxy Nanotechnology Diode Physics
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
Gas Sensing Nanomaterials and Sensors
Physical Sciences → Engineering → Electrical and Electronic Engineering
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