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Terahertz intersubband emission from silicon-germanium quantum cascades

R. W. Kelsall Z. Ikonić P. Harrison Stephen A. Lynch Ramon Bates Douglas J. Paul David J. Norris San Lin Liew A.G. Cullis David J. Robbins P. Murzyn C. R. Pidgeon Danilo Arnone

Year: 2003 Pages: 9-12

DOI: 10.1109/thz.2002.1037575

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Abstract

Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si0.76Ge0.24/Si heterostructures grown on a Si0.8Ge0.2 relaxed buffer or 'virtual substrate'.

Keywords:

Terahertz radiation Electroluminescence Silicon Germanium Optoelectronics Heterojunction Substrate (aquarium) Materials science Silicon-germanium Cascade Quantum well Semiconductor Optics Physics Nanotechnology Chemistry

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Topics

Spectroscopy and Laser Applications

Physical Sciences → Chemistry → Spectroscopy

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Terahertz technology and applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

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