Crystal quality problems of epitaxial layer growth on indium phosphide

Abstract

The authors review some crystal quality problems of epitaxial layers which can be encountered in optoelectronic material growth on InP substrates. The crystal quality control of these materials is of great importance in achieving excellent optical and electrical properties and high reliability of devices. The problem still remains however that although the quality of these materials is often excellent, a high density of crystal defects is occasionally observed. The goal is the presentation of some possible sources of defects even in well established growth conditions of low pressure metal organic chemical vapor deposition and of gas source molecular beam epitaxy.< >