We studied the breakdown of n/sup +/nn/sup +/ silicon devices in vacuum and various dielectric fluids. The breakdown voltage exhibited a dependence on the abruptness of the high-low junction and on the dielectric constant of the surrounding dielectric liquid.
F.E. PeterkinP. F. WilliamsT. RidolfiB.J. HanklaL. L. Buresh
F.E. PeterkinT. RidolfiL. L. BureshB.J. HanklaD.K. ScottP. F. WilliamsW.C. NunnallyB.L. Thomas
G. GradinaruV. MadangarliT. S. Sudarshan
J.M. ElizondoW.M. MoenyKevin Youngman
J.M. ElizondoW.M. MoenyKevin Youngman