‘Wrong bonds’ in sputtered amorphous Ge₂Sb₂Te₅

Abstract

The structure of sputtered amorphous Ge(2)Sb(2)Te(5) was investigated by high energy x-ray diffraction, neutron diffraction and Ge-, Sb- and Te K-edge EXAFS measurements. The five datasets were modelled simultaneously in the framework of the reverse Monte Carlo simulation technique. It was found that apart from Te-Sb and Te-Ge bonds existing in the crystalline phases, Ge-Ge and Sb-Ge bonding is also significant in sputtered amorphous Ge(2)Sb(2)Te(5). According to our results, all components obey the '8-N' rule.